Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7530DP-T1-GE3 SI7530DP-T1-GE3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092938-SI7530DP-T1- GE3 Drain to Source Voltage (Vdss): 60 V Number of Elements: 2 Power Dissipation: 3.5 W Number of Pins: 8 Rise Time: 9 ns Fall Time: 30 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): SI7530DP-T1-GE3SI753 0DPT1GE3; Popularity: Low Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Dual Max Power Dissipation: 1.5 W Continuous Drain Current (ID): 3.2 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 65 ns Drain to Source Resistance: 64 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 75 mΩ