Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3 SI7501DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028655-SI7501DN-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.4A, 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3 - 028655-SI7501DN-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7501DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual N/p Ch Mosfet, 30V, Powerpak, Full Reel; Transistor Polarity Vishay - 06J8160 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028655-SI7501DN-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.4A, 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3 - 028655-SI7501DN-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3
028655-SI7501DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3 028655-SI7501DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028655-SI7501DN-T1-E 3 Packaging: Cut Reel Mounting: SMD (SMT) FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 1.6W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.4A, 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 10V Maximum Rds On at Id,Vgs: 35 mOhm @ 7.7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028655-SI7501DN-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.4A, 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 10V
Maximum Rds On at Id,Vgs: 35 mOhm @ 7.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7501DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7501DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7501DN-T1-E3
MOSFET N/P-CH 30V 5.4A 1212-8

MOSFET N/P-CH 30V 5.4A 1212-8

Supplier's Site
Dual N/p Ch Mosfet, 30V, Powerpak, Full Reel; Transistor Polarity Vishay - 06J8160 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Ch Mosfet, 30V, Powerpak, Full Reel; Transistor Polarity Vishay
06J8160
Dual N/p Ch Mosfet, 30V, Powerpak, Full Reel; Transistor Polarity Vishay 06J8160
DUAL N/P CH MOSFET, 30V, POWERPAK, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.4A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CH MOSFET, 30V, POWERPAK, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.4A; On Resistance Rds(on):0.028ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028655-SI7501DN-T1-E3 SI7501DN-T1-E3 06J8160
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7501DN-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N/p Ch Mosfet, 30V, Powerpak, Full Reel; Transistor Polarity Vishay
Polarity P-Channel
V(BR)DSS 30 volts
PD 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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