Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-GE3 SI7485DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 133394-SI7485DP-T1-G E3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 900mV @ 1mA Max Gate Charge: 150nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 20A, 4.5V Alternative Parts (Cross-Reference): NTTFS3A08PTAG; NTTFS3A08PTWG; NTTFS3A08PZTWG; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 133394-SI7485DP-T1-G E3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 900mV @ 1mA Max Gate Charge: 150nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 20A, 4.5V Alternative Parts (Cross-Reference): NTTFS3A08PTAG; NTTFS3A08PTWG; NTTFS3A08PZTWG; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-GE3 - 133394-SI7485DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-GE3
133394-SI7485DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-GE3 133394-SI7485DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 133394-SI7485DP-T1-G E3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 900mV @ 1mA Max Gate Charge: 150nC @ 5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 20A, 4.5V Alternative Parts (Cross-Reference): NTTFS3A08PTAG; NTTFS3A08PTWG; NTTFS3A08PZTWG; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 133394-SI7485DP-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 900mV @ 1mA
Max Gate Charge: 150nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 20A, 4.5V
Alternative Parts (Cross-Reference): NTTFS3A08PTAG; NTTFS3A08PTWG; NTTFS3A08PZTWG;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7485DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7485DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7485DP-T1-GE3
MOSFET P-CH 20V 12.5A PPAK SO-8

MOSFET P-CH 20V 12.5A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 133394-SI7485DP-T1-GE3 SI7485DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 1800 milliwatts
Unlock Full Specs
to access all available technical data