Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7485DP-T1-E3 SI7485DP-T1-E3

Manufacturer: Vishay
Win Source Part Number: 1096177-SI7485DP-T1-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 900mV @ 1mA
Max Gate Charge: 150nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 20A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

MOSFET P-CH 20V 12.5A PPAK SO-8 Product overview: SI7485DP-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7485DP-T1-E3 can be used for catalog matching and distributor lookup.