Vishay Precision Group Single FETs, MOSFETs SI7478DP-T1-GE3

Description
N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7478DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7478DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7478DP-T1-GE3TR-ND
N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 60V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7478DP-T1-GE3 - 1096175-SI7478DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7478DP-T1-GE3
1096175-SI7478DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7478DP-T1-GE3 1096175-SI7478DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096175-SI7478DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 160nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096175-SI7478DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 160nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7478DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7478DP-T1-GE3
Single FETs, MOSFETs SI7478DP-T1-GE3
MOSFET N-CH 60V 15A PPAK SO-8

MOSFET N-CH 60V 15A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK SO-8

MOSFET 60V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7478DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7478DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7478DP-T1-GE3
MOSFET N-CH 60V 15A PPAK SO-8

MOSFET N-CH 60V 15A PPAK SO-8

Supplier's Site
N Channel Mosfet, 60V, 20A, Soic; Channel Type Vishay - 26R1929 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 20A, Soic; Channel Type Vishay
26R1929
N Channel Mosfet, 60V, 20A, Soic; Channel Type Vishay 26R1929
N CHANNEL MOSFET, 60V, 20A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 20A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7478DP-T1-GE3TR-ND 1096175-SI7478DP-T1-GE3 SI7478DP-T1-GE3 SI7478DP-T1-GE3 SI7478DP-T1-GE3 26R1929
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7478DP-T1-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 20A, Soic; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 Surface Mount TO-3
V(BR)DSS 60 volts 60 volts
PD 1900 milliwatts 1900 milliwatts
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