Manufacturer: Vishay Siliconix
Win Source Part Number: 805082-SI7469DP-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 5.2W , 83.3W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 25mOhm at 10.2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4700pF at 40V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
MOSFET P-CH 80V 28A PPAK SO-8
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
P-CH MOSFET -80V, 28A, 25mR, SOIC, Surface Mount Product overview: SI7469DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -80V, 28A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -80V, 28A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7469DP-T1-GE3 can be used for catalog matching and distributor lookup.
80V 28A 25mΩ@10V,10.2A 5.2W 3V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
P CHANNEL MOSFET, -80V, 28A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; On Resistance Rds(on):0.029ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET, P-CH, -80V, -28A, POWERPAK SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
P CHANNEL MOSFET, -80V, 28A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET P-CH 80V 28A PPAK SO-8
MOSFET -80V Vds 20V Vgs PowerPAK SO-8
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 805082-SI7469DP-T1-GE3 | SI7469DP-T1-GE3 | SI7469DP-T1-GE3CT-ND | 278-SI7469DP-T1-GE3 | SI7469DP-T1-GE3 | 26R1927 | 61AC1941 | 15R5209 | SI7469DP-T1-GE3 | SI7469DP-T1-GE3 |
| Product Name | FETs - Single - SI7469DP-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | SMD -80V 28A SOIC MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet, -80V, 28A, Soic; Transistor Polarity Vishay | Mosfet, P-Ch, -80V, -28A, Powerpak So-8; Transistor Polarity Vishay | P Channel Mosfet, -80V, 28A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 5200 to 83300 milliwatts | 5200 milliwatts | 83000 milliwatts | 5200 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||||
| Package Type | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | TO-3; SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | |||
| Packing Method | Tape Reel; Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |