Vishay Precision Group FETs - Single - SI7469DP-T1-GE3 SI7469DP-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 805082-SI7469DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 80V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 5.2W , 83.3W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 25mOhm at 10.2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4700pF at 40V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 805082-SI7469DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 80V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 5.2W , 83.3W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 25mOhm at 10.2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4700pF at 40V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - SI7469DP-T1-GE3 - 805082-SI7469DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI7469DP-T1-GE3
805082-SI7469DP-T1-GE3
FETs - Single - SI7469DP-T1-GE3 805082-SI7469DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 805082-SI7469DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 80V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 5.2W , 83.3W (Tc) Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 25mOhm at 10.2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4700pF at 40V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 805082-SI7469DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 5.2W , 83.3W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 25mOhm at 10.2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4700pF at 40V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

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Single FETs, MOSFETs - SI7469DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7469DP-T1-GE3
Single FETs, MOSFETs SI7469DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8

MOSFET P-CH 80V 28A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7469DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7469DP-T1-GE3CT-ND
Single FETs, MOSFETs SI7469DP-T1-GE3CT-ND
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7469DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7469DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7469DP-T1-GE3TR-ND
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7469DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7469DP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7469DP-T1-GE3DKR-ND
P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 80V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8

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Singapore
SMD -80V 28A SOIC MOSFET Transistor
278-SI7469DP-T1-GE3
SMD -80V 28A SOIC MOSFET Transistor 278-SI7469DP-T1-GE3
P-CH MOSFET -80V, 28A, 25mR, SOIC, Surface Mount Product overview: SI7469DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -80V, 28A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -80V, 28A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7469DP-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET -80V, 28A, 25mR, SOIC, Surface Mount Product overview: SI7469DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -80V, 28A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -80V, 28A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7469DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI7469DP-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI7469DP-T1-GE3
80V 28A 25mΩ@10V,10.2A 5.2W 3V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

80V 28A 25mΩ@10V,10.2A 5.2W 3V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS

Supplier's Site Datasheet
P Channel Mosfet, -80V, 28A, Soic; Transistor Polarity Vishay - 26R1927 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -80V, 28A, Soic; Transistor Polarity Vishay
26R1927
P Channel Mosfet, -80V, 28A, Soic; Transistor Polarity Vishay 26R1927
P CHANNEL MOSFET, -80V, 28A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; On Resistance Rds(on):0.029ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

P CHANNEL MOSFET, -80V, 28A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; On Resistance Rds(on):0.029ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, -80V, -28A, Powerpak So-8; Transistor Polarity Vishay - 61AC1941 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -80V, -28A, Powerpak So-8; Transistor Polarity Vishay
61AC1941
Mosfet, P-Ch, -80V, -28A, Powerpak So-8; Transistor Polarity Vishay 61AC1941
MOSFET, P-CH, -80V, -28A, POWERPAK SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

MOSFET, P-CH, -80V, -28A, POWERPAK SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -80V, 28A, Soic; Channel Type Vishay - 15R5209 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -80V, 28A, Soic; Channel Type Vishay
15R5209
P Channel Mosfet, -80V, 28A, Soic; Channel Type Vishay 15R5209
P CHANNEL MOSFET, -80V, 28A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -80V, 28A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7469DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7469DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7469DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8

MOSFET P-CH 80V 28A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -80V Vds 20V Vgs PowerPAK SO-8

MOSFET -80V Vds 20V Vgs PowerPAK SO-8

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 805082-SI7469DP-T1-GE3 SI7469DP-T1-GE3 SI7469DP-T1-GE3CT-ND 278-SI7469DP-T1-GE3 SI7469DP-T1-GE3 26R1927 61AC1941 15R5209 SI7469DP-T1-GE3 SI7469DP-T1-GE3
Product Name FETs - Single - SI7469DP-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs SMD -80V 28A SOIC MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs P Channel Mosfet, -80V, 28A, Soic; Transistor Polarity Vishay Mosfet, P-Ch, -80V, -28A, Powerpak So-8; Transistor Polarity Vishay P Channel Mosfet, -80V, 28A, Soic; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
PD 5200 to 83300 milliwatts 5200 milliwatts 83000 milliwatts 5200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 TO-3 TO-3; SO-8 TO-3 SO-8; PowerPAKR SO-8
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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