MOSFET P-CH 60V 3.2A PPAK SO-8
P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028650-SI7465DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 64 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
P-Ch PowerPAK SO-8 30V 6mohm @10V
MOSFET P-CH 60V 3.2A PPAK SO-8
MOSFET, P CHANNEL, -60V, 0.051OHM, -3.2A, POWERPAK SO, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; No. of Pins:8Pins RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 5A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET -60V Vds 20V Vgs PowerPAK SO-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7465DP-T1-E3 | SI7465DP-T1-E3TR-ND | 028650-SI7465DP-T1-E3 | 2567389 | SI7465DP-T1-E3 | 73W9417 | 51K6994 | SI7465DP-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7465DP-T1-E3 | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -60V, 0.051Ohm, -3.2A, Powerpak So, Full Reel; Channel Type Vishay | P Channel Mosfet, -60V, 5A, Soic; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 3200 milliamps | 3200 milliamps | 5000 milliamps |
