Vishay Precision Group Single FETs, MOSFETs SI7463DP-T1-E3

Description
P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI7463DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7463DP-T1-E3CT-ND
Single FETs, MOSFETs SI7463DP-T1-E3CT-ND
P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7463DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7463DP-T1-E3DKR-ND
Single FETs, MOSFETs SI7463DP-T1-E3DKR-ND
P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7463DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7463DP-T1-E3TR-ND
Single FETs, MOSFETs SI7463DP-T1-E3TR-ND
P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7463DP-T1-E3 - 028649-SI7463DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7463DP-T1-E3
028649-SI7463DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7463DP-T1-E3 028649-SI7463DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 028649-SI7463DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.9W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 140nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.2 mOhm @ 18.6A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028649-SI7463DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 140nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.2 mOhm @ 18.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
P-Channel 40V 11A SOIC MOSFET Transistor
278-SI7463DP-T1-E3
P-Channel 40V 11A SOIC MOSFET Transistor 278-SI7463DP-T1-E3
P-Channel MOSFET, 40V, 11A, 9.2mR, PowerPAK SOIC Product overview: SI7463DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 11A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7463DP-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 40V, 11A, 9.2mR, PowerPAK SOIC Product overview: SI7463DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 11A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7463DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI7463DP-T1-E3
Triode/MOS Tube/Transistor >> MOSFETs SI7463DP-T1-E3
40V 11A 1.9W 9.2mΩ@10V,18.6A 3V@250uA P Channel PowerPAK-SO-8 MOSFETs ROHS

40V 11A 1.9W 9.2mΩ@10V,18.6A 3V@250uA P Channel PowerPAK-SO-8 MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7463DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7463DP-T1-E3
Single FETs, MOSFETs SI7463DP-T1-E3
MOSFET P-CH 40V 11A PPAK SO-8

MOSFET P-CH 40V 11A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V

MOSFET 40V 18.6A 5.4W 9.2mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7463DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7463DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7463DP-T1-E3
MOSFET P-CH 40V 11A PPAK SO-8

MOSFET P-CH 40V 11A PPAK SO-8

Supplier's Site
Mosfet Transistor, P Channel, 18.6 A, -40 V, 0.0075 Ohm, 20 V, -3 V Rohs Compliant Vishay - 40P0818 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 18.6 A, -40 V, 0.0075 Ohm, 20 V, -3 V Rohs Compliant Vishay
40P0818
Mosfet Transistor, P Channel, 18.6 A, -40 V, 0.0075 Ohm, 20 V, -3 V Rohs Compliant Vishay 40P0818
MOSFET Transistor, P Channel, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -40V, 18.6A, Soic-8, Full Reel; Channel Type Vishay - 71T8055 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -40V, 18.6A, Soic-8, Full Reel; Channel Type Vishay
71T8055
P Channel Mosfet, -40V, 18.6A, Soic-8, Full Reel; Channel Type Vishay 71T8055
P CHANNEL MOSFET, -40V, 18.6A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: Yes

P CHANNEL MOSFET, -40V, 18.6A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: Yes

Supplier's Site
P Channel Mosfet, -40V, 18.6A, Soic-8; Channel Type Vishay - 57J5736 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -40V, 18.6A, Soic-8; Channel Type Vishay
57J5736
P Channel Mosfet, -40V, 18.6A, Soic-8; Channel Type Vishay 57J5736
P CHANNEL MOSFET, -40V, 18.6A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -40V, 18.6A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:18.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7463DP-T1-E3CT-ND 028649-SI7463DP-T1-E3 278-SI7463DP-T1-E3 SI7463DP-T1-E3 SI7463DP-T1-E3 SI7463DP-T1-E3 SI7463DP-T1-E3 40P0818 71T8055 57J5736
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7463DP-T1-E3 P-Channel 40V 11A SOIC MOSFET Transistor Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, 18.6 A, -40 V, 0.0075 Ohm, 20 V, -3 V Rohs Compliant Vishay P Channel Mosfet, -40V, 18.6A, Soic-8, Full Reel; Channel Type Vishay P Channel Mosfet, -40V, 18.6A, Soic-8; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 SO-8; PowerPAKR SO-8 TO-3 TO-3 TO-3
V(BR)DSS 40 volts 40 volts 40 volts
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts 1900 milliwatts 1900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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