MOSFET P-CH 60V 8.6A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 028648-SI7461DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 190nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14.5 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): STL12P6F6; TPCA8135(TE12L,Q); TPCA8135;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
P-CH MOSFET -60V, 8.6A, 14.5mR, SOIC, PwrPAK Product overview: SI7461DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 8.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7461DP-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET -60V Vds 20V Vgs PowerPAK SO-8
60V 8.6A 14.5mΩ@14.4A,10V 1.9W 3V@250uA P Channel PowerPAK-SO-8 MOSFETs ROHS
MOSFET P-CH 60V 8.6A PPAK SO-8
MOSFET Transistor, P Channel, 8.6 A, 60 V, 0.0115 ohm, -10 V, -3 V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 14.4A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:14.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7461DP-T1-GE3 | 028648-SI7461DP-T1-GE3 | 278-SI7461DP-T1-GE3 | SI7461DP-T1-GE3CT-ND | SI7461DP-T1-GE3 | SI7461DP-T1-GE3 | SI7461DP-T1-GE3 | 26K3231 | 16P3849 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-GE3 | -60V 8.6A SOIC MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 8.6 A, 60 V, 0.0115 Ohm, -10 V, -3 V Rohs Compliant Vishay | P Channel Mosfet, -60V, 14.4A, Soic, Full Reel; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 8600 milliamps | 14400 milliamps | |||||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts |