P-CH MOSFET -60V, 8.6A, 14.5mR, SOIC, PwrPAK Product overview: SI7461DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 8.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7461DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 8.6A PPAK SO-8
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 1249474-SI7461DP-T1-
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Family Name: Si7461DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 190nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): STL42P6LLF6; TPCA8104; TPCA8104(TE12L,Q,M;
Introduction Date: October 30, 2003
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
P CHANNEL MOSFET, -60V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET P-CH 60V 8.6A PPAK SO-8
P CHANNEL MOSFET, -60V, 12.6A, SOIC; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:12.6A; ON RESISTANCE RDS(ON):0.19OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:20V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET -60V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7461DP-T1-E3 | SI7461DP-T1-E3 | SI7461DP-T1-E3DKR-ND | 1249474-SI7461DP-T1-E3 | 02J5264 | SI7461DP-T1-E3 | 22265647 | SI7461DP-T1-E3 |
| Product Name | -60V 8.6A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3 | P Channel Mosfet, -60V, 12.6A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
