Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3 SI7461DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1249474-SI7461DP-T1- E3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Family Name: Si7461DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Channel Type Type: P Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 190nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V Alternative Parts (Cross-Reference): STL42P6LLF6; TPCA8104; TPCA8104(TE12L,Q,M; Introduction Date: October 30, 2003 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1249474-SI7461DP-T1- E3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Family Name: Si7461DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Channel Type Type: P Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 190nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V Alternative Parts (Cross-Reference): STL42P6LLF6; TPCA8104; TPCA8104(TE12L,Q,M; Introduction Date: October 30, 2003 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3 - 1249474-SI7461DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3
1249474-SI7461DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3 1249474-SI7461DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 1249474-SI7461DP-T1- E3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Family Name: Si7461DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: PowerPAK SO-8 Channel Type Type: P Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 190nC @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V Alternative Parts (Cross-Reference): STL42P6LLF6; TPCA8104; TPCA8104(TE12L,Q,M; Introduction Date: October 30, 2003 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1249474-SI7461DP-T1-E3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Family Name: Si7461DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 190nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
Alternative Parts (Cross-Reference): STL42P6LLF6; TPCA8104; TPCA8104(TE12L,Q,M;
Introduction Date: October 30, 2003
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI7461DP-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7461DP-T1-E3DKR-ND
Single FETs, MOSFETs SI7461DP-T1-E3DKR-ND
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7461DP-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7461DP-T1-E3CT-ND
Single FETs, MOSFETs SI7461DP-T1-E3CT-ND
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7461DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7461DP-T1-E3TR-ND
Single FETs, MOSFETs SI7461DP-T1-E3TR-ND
P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7461DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7461DP-T1-E3
Single FETs, MOSFETs SI7461DP-T1-E3
MOSFET P-CH 60V 8.6A PPAK SO-8

MOSFET P-CH 60V 8.6A PPAK SO-8

Supplier's Site Datasheet
Singapore
-60V 8.6A SOIC MOSFET Transistor
278-SI7461DP-T1-E3
-60V 8.6A SOIC MOSFET Transistor 278-SI7461DP-T1-E3
P-CH MOSFET -60V, 8.6A, 14.5mR, SOIC, PwrPAK Product overview: SI7461DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 8.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7461DP-T1-E3 can be used for catalog matching and distributor lookup.

P-CH MOSFET -60V, 8.6A, 14.5mR, SOIC, PwrPAK Product overview: SI7461DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 8.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7461DP-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -60V Vds 20V Vgs PowerPAK SO-8

MOSFET -60V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
P Channel Mosfet, -60V, 12.6A, Soic; Channel Type Vishay - 02J5264 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 12.6A, Soic; Channel Type Vishay
02J5264
P Channel Mosfet, -60V, 12.6A, Soic; Channel Type Vishay 02J5264
P CHANNEL MOSFET, -60V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Transistor - 22265647 - Radwell International
Willingboro, NJ, United States
Transistor
22265647
Transistor 22265647
P CHANNEL MOSFET, -60V, 12.6A, SOIC; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:12.6A; ON RESISTANCE RDS(ON):0.19OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:20V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -60V, 12.6A, SOIC; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:12.6A; ON RESISTANCE RDS(ON):0.19OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:20V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7461DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7461DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7461DP-T1-E3
MOSFET P-CH 60V 8.6A PPAK SO-8

MOSFET P-CH 60V 8.6A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1249474-SI7461DP-T1-E3 SI7461DP-T1-E3DKR-ND SI7461DP-T1-E3 278-SI7461DP-T1-E3 SI7461DP-T1-E3 02J5264 22265647 SI7461DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7461DP-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs -60V 8.6A SOIC MOSFET Transistor MOSFET P Channel Mosfet, -60V, 12.6A, Soic; Channel Type Vishay Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SO-8; SOT3 SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 TO-3 SO-8; PowerPAKR SO-8
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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