Vishay Precision Group SMD 60V 11A SOIC MOSFET Transistor SI7460DP-T1-E3

60V 11A N-CH MOSFET 9.6mR SOIC Surface Mount Product overview: SI7460DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 11A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7460DP-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 11A PPAK SO-8

N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay
Win Source Part Number: 028647-SI7460DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 100nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.6 mOhm @ 18A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance