MOSFET N-CH 100V 5.7A PPAK SO-8
N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028646-SI7456DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7456DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 9.3A, 10V
Alternative Parts (Cross-Reference): BSC240N12NS3GATMA1; BSC240N12NS3GXT; BSC240N12NS3 G; Si7456DDP-T1-GE3;
Introduction Date: May 11, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
MOSFET RECOMMENDED ALT 781-SI7456DP-T1-GE3
MOSFET N-CH 100V 5.7A PPAK SO-8
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:5.2W RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7456DP-T1-E3 | SI7456DP-T1-E3DKR-ND | 028646-SI7456DP-T1-E3 | SI7456DP-T1-E3 | SI7456DP-T1-E3 | SI7456DP-T1-E3 | 06J8153 | 35K3490 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456DP-T1-E3 | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | N Channel Mosfet, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 5700 milliamps | 9300 milliamps | 9300 milliamps | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 5200 milliwatts |
