N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028646-SI7456DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7456DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 9.3A, 10V
Alternative Parts (Cross-Reference): BSC240N12NS3GATMA1; BSC240N12NS3GXT; BSC240N12NS3 G; Si7456DDP-T1-GE3;
Introduction Date: May 11, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 5.7A PPAK SO-8
N-Channel Power MOSFET, 100V, 5.7A, 25mR, Surface Mount Product overview: SI7456DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7456DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 5.7A PPAK SO-8
MOSFET RECOMMENDED ALT 781-SI7456DP-T1-GE3
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:5.2W RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Product Range:- RoHS Compliant: Yes
100V 5.7A 25mΩ@10V,9.3A 1.9W 4V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7456DP-T1-E3DKR-ND | 028646-SI7456DP-T1-E3 | SI7456DP-T1-E3 | 278-SI7456DP-T1-E3 | SI7456DP-T1-E3 | SI7456DP-T1-E3 | 06J8153 | 35K3490 | SI7456DP-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456DP-T1-E3 | Single FETs, MOSFETs | N-Channel SMD 100V 5.7A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet; Channel Type Vishay | N Channel Mosfet, Full Reel; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | TO-3 | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||||
| PD | 1900 milliwatts | 1900 milliwatts | 5200 milliwatts | 5200 milliwatts | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
