Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456CDP-T1-GE3 SI7456CDP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064569-SI7456CDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Family Name: Si7456CDP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 27.5A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 730pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMNH10H028SPS-13; STL30N10F7; STL45N10F7AG; Introduction Date: April 07, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064569-SI7456CDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Family Name: Si7456CDP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 27.5A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 730pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMNH10H028SPS-13; STL30N10F7; STL45N10F7AG; Introduction Date: April 07, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456CDP-T1-GE3 - 064569-SI7456CDP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456CDP-T1-GE3
064569-SI7456CDP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456CDP-T1-GE3 064569-SI7456CDP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064569-SI7456CDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Family Name: Si7456CDP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 27.5A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 730pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): DMNH10H028SPS-13; STL30N10F7; STL45N10F7AG; Introduction Date: April 07, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064569-SI7456CDP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Family Name: Si7456CDP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 27.5A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 730pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): DMNH10H028SPS-13; STL30N10F7; STL45N10F7AG;
Introduction Date: April 07, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7456CDP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7456CDP-T1-GE3TR-ND
Single FETs, MOSFETs SI7456CDP-T1-GE3TR-ND
N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7456CDP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7456CDP-T1-GE3CT-ND
Single FETs, MOSFETs SI7456CDP-T1-GE3CT-ND
N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7456CDP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7456CDP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7456CDP-T1-GE3DKR-ND
N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
N-Channel 10.3 A 100 V 0.0235 ohm MOSFET Transistor
278-SI7456CDP-T1-GE3
N-Channel 10.3 A 100 V 0.0235 ohm MOSFET Transistor 278-SI7456CDP-T1-GE3
TRANSISTOR 10.3 A, 100 V, 0.0235 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7456CDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.3 A, 100 V, 0.0235 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.3 A, 100 V, 0.0235 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7456CDP-T1-GE3 can be used for catalog matching and distributor lookup.

TRANSISTOR 10.3 A, 100 V, 0.0235 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Product overview: SI7456CDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.3 A, 100 V, 0.0235 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.3 A, 100 V, 0.0235 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7456CDP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 100V 27.5A 35.7W

MOSFET 100V 27.5A 35.7W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7456CDP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7456CDP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7456CDP-T1-GE3
MOSFET N-CH 100V 27.5A PPAK SO-8

MOSFET N-CH 100V 27.5A PPAK SO-8

Supplier's Site
Single FETs, MOSFETs - SI7456CDP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7456CDP-T1-GE3
Single FETs, MOSFETs SI7456CDP-T1-GE3
MOSFET N-CH 100V 27.5A PPAK SO-8

MOSFET N-CH 100V 27.5A PPAK SO-8

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064569-SI7456CDP-T1-GE3 SI7456CDP-T1-GE3TR-ND 278-SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 SI7456CDP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7456CDP-T1-GE3 Single FETs, MOSFETs N-Channel 10.3 A 100 V 0.0235 ohm MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 5000 to 35700 milliwatts 35700 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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