MOSFET N-CH 100V 5A PPAK SO-8
N-Channel Power MOSFET, 100V, 5A, 34mR, SOIC, Surface Mount Product overview: SI7454DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7454DP-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028645-SI7454DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Communications & Networking, Automotive
Quantity per package: 3k pcs
N-Channel 100V 5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 100V 5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N CHANNEL MOSFET, 100V, 7.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N CHANNEL, 100V, 5A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.9W RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 100V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, POWERPAK-SO-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 5A PPAK SO-8
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI7454DP-T1-E3 | 278-SI7454DP-T1-E3 | 028645-SI7454DP-T1-E3 | SI7454DP-T1-E3DKR-ND | 06J8152 | 29X0546 | 22265615 | SI7454DP-T1-E3 | SI7454DP-T1-E3 |
| Product Name | Single FETs, MOSFETs | N-Channel SMD 100V 5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7454DP-T1-E3 | Single FETs, MOSFETs | N Channel Mosfet, 100V, 7.8A, Soic; Channel Type Vishay | Mosfet, N Channel, 100V, 5A, Powerpak So-8, Full Reel; Channel Type Vishay | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| IDSS | 5000 milliamps | 5000 milliamps | 5000 milliamps |
