Manufacturer: Vishay
Win Source Part Number: 064568-SI7452DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11.5A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 160nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.3 mOhm @ 19.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 11.5A PPAK SO-8
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064568-SI7452DP-T1-E3 | SI7452DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7452DP-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 60 volts | |
| PD | 1900 milliwatts |
