Manufacturer: Vishay
Win Source Part Number: 028644-SI7450DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7450DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): RJK2057DPA-00#J0; RJK2076DPA-00#J5A; STL20NM20N; TPH1110ENH;
Introduction Date: April 09, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Communications & Networking, Automotive
200V 3.2A N-CH MOSFET, 80mR Rds On, SOIC, Surface Mount Product overview: SI7450DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 200V, 3.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 3.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7450DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W RoHS Compliant: Yes
MOSFET N-CH 200V 3.2A PPAK SO-8
MOSFET N-CH 200V 3.2A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028644-SI7450DP-T1-GE3 | 278-SI7450DP-T1-GE3 | SI7450DP-T1-GE3DKR-ND | SI7450DP-T1-GE3 | 15R5198 | SI7450DP-T1-GE3 | SI7450DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-GE3 | SMD 200V 3.2A SOIC MOSFET Transistor | Single FETs, MOSFETs | MOSFET | N Ch Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
