Vishay Precision Group Single FETs, MOSFETs SI7450DP-T1-GE3

Description
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI7450DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7450DP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7450DP-T1-GE3DKR-ND
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7450DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7450DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7450DP-T1-GE3TR-ND
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7450DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7450DP-T1-GE3CT-ND
Single FETs, MOSFETs SI7450DP-T1-GE3CT-ND
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-GE3 - 028644-SI7450DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-GE3
028644-SI7450DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-GE3 028644-SI7450DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028644-SI7450DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7450DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 42nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): RJK2057DPA-00#J0; RJK2076DPA-00#J5A; STL20NM20N; TPH1110ENH; Introduction Date: April 09, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Communications & Networking, Automotive

Manufacturer: Vishay
Win Source Part Number: 028644-SI7450DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7450DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): RJK2057DPA-00#J0; RJK2076DPA-00#J5A; STL20NM20N; TPH1110ENH;
Introduction Date: April 09, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Communications & Networking, Automotive

Buy Now Datasheet
Singapore, Singapore
SMD 200V 3.2A SOIC MOSFET Transistor
278-SI7450DP-T1-GE3
SMD 200V 3.2A SOIC MOSFET Transistor 278-SI7450DP-T1-GE3
200V 3.2A N-CH MOSFET, 80mR Rds On, SOIC, Surface Mount Product overview: SI7450DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 200V, 3.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 3.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7450DP-T1-GE3 can be used for catalog matching and distributor lookup.

200V 3.2A N-CH MOSFET, 80mR Rds On, SOIC, Surface Mount Product overview: SI7450DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 200V, 3.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 3.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7450DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI7450DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7450DP-T1-GE3
Single FETs, MOSFETs SI7450DP-T1-GE3
MOSFET N-CH 200V 3.2A PPAK SO-8

MOSFET N-CH 200V 3.2A PPAK SO-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 200V Vds 20V Vgs PowerPAK SO-8

MOSFET 200V Vds 20V Vgs PowerPAK SO-8

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N Ch Mosfet; Channel Type Vishay - 15R5198 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet; Channel Type Vishay
15R5198
N Ch Mosfet; Channel Type Vishay 15R5198
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W RoHS Compliant: Yes

N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7450DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7450DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7450DP-T1-GE3
MOSFET N-CH 200V 3.2A PPAK SO-8

MOSFET N-CH 200V 3.2A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7450DP-T1-GE3DKR-ND 028644-SI7450DP-T1-GE3 278-SI7450DP-T1-GE3 SI7450DP-T1-GE3 SI7450DP-T1-GE3 15R5198 SI7450DP-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-GE3 SMD 200V 3.2A SOIC MOSFET Transistor Single FETs, MOSFETs MOSFET N Ch Mosfet; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 TO-3 Surface Mount
V(BR)DSS 200 volts 200 volts
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts 1900 milliwatts
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