Manufacturer: Vishay
Win Source Part Number: 028643-SI7450DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7450DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 42nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): IRFH5220TR2PBF; IRFH5220TRPBF; HAT2187WP-EL-E; BSC900N20NS3 G;
Introduction Date: April 09, 2001
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
200V N-CH MOSFET, 5.3A, 80mR Rds On, Surface Mount Product overview: SI7450DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 200V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 200V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7450DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 3.2A PPAK SO-8
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; No. of Pins:8Pins RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:5.2W RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 781-SI7450DP
MOSFET N-CH 200V 3.2A PPAK SO-8
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028643-SI7450DP-T1-E3 | 278-SI7450DP-T1-E3 | SI7450DP-T1-E3 | SI7450DP-T1-E3CT-ND | 35K3489 | 06J8151 | SI7450DP-T1-E3 | SI7450DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7450DP-T1-E3 | SMD 200V 5.3A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | N Ch Mosfet, Full Reel; Channel Type Vishay | N Channel Mosfet; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| PD | 1900 milliwatts | 5200 milliwatts | 1900 milliwatts | 5200 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
