Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7447ADP-T1-E3 SI7447ADP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028642-SI7447ADP-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4650pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): AON6405; SI7447ADP-T1; SI7447ADP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028642-SI7447ADP-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4650pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): AON6405; SI7447ADP-T1; SI7447ADP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7447ADP-T1-E3 - 028642-SI7447ADP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7447ADP-T1-E3
028642-SI7447ADP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7447ADP-T1-E3 028642-SI7447ADP-T1-E3
Manufacturer: Vishay Win Source Part Number: 028642-SI7447ADP-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4650pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): AON6405; SI7447ADP-T1; SI7447ADP-T1-GE3; Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028642-SI7447ADP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4650pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): AON6405; SI7447ADP-T1; SI7447ADP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7447ADP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7447ADP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7447ADP-T1-E3
MOSFET P-CH 30V 35A PPAK 1212-8

MOSFET P-CH 30V 35A PPAK 1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028642-SI7447ADP-T1-E3 SI7447ADP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7447ADP-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 5400 to 83300 milliwatts
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