Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7446DP-T1-E3 SI7446DP-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1023848-SI7446DP-T1- E3 Length: 4.9 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.9 W Height: 1.04 mm Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Width: 5.89 mm Rise Time: 16 ns Fall Time: 16 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 120 ns Drain to Source Resistance: 7.5 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1023848-SI7446DP-T1- E3 Length: 4.9 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.9 W Height: 1.04 mm Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Width: 5.89 mm Rise Time: 16 ns Fall Time: 16 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 120 ns Drain to Source Resistance: 7.5 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7446DP-T1-E3 - 1023848-SI7446DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7446DP-T1-E3
1023848-SI7446DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7446DP-T1-E3 1023848-SI7446DP-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1023848-SI7446DP-T1- E3 Length: 4.9 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 1.9 W Height: 1.04 mm Weight: 506.605978 mg Number of Channels: 1 Number of Pins: 8 Width: 5.89 mm Rise Time: 16 ns Fall Time: 16 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.9 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 120 ns Drain to Source Resistance: 7.5 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1023848-SI7446DP-T1-E3
Length: 4.9 mm
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 1.9 W
Height: 1.04 mm
Weight: 506.605978 mg
Number of Channels: 1
Number of Pins: 8
Width: 5.89 mm
Rise Time: 16 ns
Fall Time: 16 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.9 W
Turn-On Delay Time: 20 ns
Continuous Drain Current (ID): 12 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 120 ns
Drain to Source Resistance: 7.5 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1023848-SI7446DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7446DP-T1-E3
V(BR)DSS 30 volts
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