Vishay Intertechnology, Inc. MOSFET SI7444DP-T1-GE3

The Si7444DP-T1-GE3 is an N-channel 40-V MOSFET in a PowerPAK SO-8 package measuring 6.15 mm by 5.15 mm with a 1.07 mm profile, designed for high-efficiency switching applications. It has a maximum on-state resistance of 0.0061 Ω at 10 V gate-source voltage and a continuous drain current of 18.9 A at 70 °C. The device supports a pulsed drain current up to 60 A and features a gate threshold voltage range of 3.4 V to 4.5 V. It meets IEC 61249-2-21 halogen-free standards and is RoHS compliant. Thermal resistance is rated at 52 °C/W junction-to-ambient under steady-state conditions. Operating junction and storage temperatures range from -55 °C to 150 °C.