Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3 SI7439DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 102467-SI7439DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7439DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 135nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V Alternative Parts (Cross-Reference): FDMS86263P; Introduction Date: August 13, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Vishay Win Source Part Number: 102467-SI7439DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7439DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 135nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V Alternative Parts (Cross-Reference): FDMS86263P; Introduction Date: August 13, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3 - 102467-SI7439DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3
102467-SI7439DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3 102467-SI7439DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 102467-SI7439DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.9W (Ta) Family Name: Si7439DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 135nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V Alternative Parts (Cross-Reference): FDMS86263P; Introduction Date: August 13, 2004 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 102467-SI7439DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7439DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 135nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V
Alternative Parts (Cross-Reference): FDMS86263P;
Introduction Date: August 13, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI7439DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7439DP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7439DP-T1-GE3DKR-ND
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7439DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7439DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7439DP-T1-GE3TR-ND
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7439DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7439DP-T1-GE3CT-ND
Single FETs, MOSFETs SI7439DP-T1-GE3CT-ND
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
150V 3A MOSFET Transistor
278-SI7439DP-T1-GE3
150V 3A MOSFET Transistor 278-SI7439DP-T1-GE3
P-CH MOSFET 150V 3A 90mR PowerPAK SO 8-Pin Product overview: SI7439DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7439DP-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 150V 3A 90mR PowerPAK SO 8-Pin Product overview: SI7439DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7439DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -150V Vds 20V Vgs PowerPAK SO-8

MOSFET -150V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay - 26R1923 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay
26R1923
P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay 26R1923
P CHANNEL MOSFET, -150V, 3A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -150V, 3A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - SI7439DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7439DP-T1-GE3
Single FETs, MOSFETs SI7439DP-T1-GE3
MOSFET P-CH 150V 3A PPAK SO-8

MOSFET P-CH 150V 3A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7439DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7439DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7439DP-T1-GE3
MOSFET P-CH 150V 3A PPAK SO-8

MOSFET P-CH 150V 3A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 102467-SI7439DP-T1-GE3 SI7439DP-T1-GE3DKR-ND 278-SI7439DP-T1-GE3 SI7439DP-T1-GE3 26R1923 SI7439DP-T1-GE3 SI7439DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3 Single FETs, MOSFETs 150V 3A MOSFET Transistor MOSFET P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 150 volts 150 volts
PD 1900 milliwatts 1900 milliwatts 1900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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