Manufacturer: Vishay
Win Source Part Number: 102467-SI7439DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Family Name: Si7439DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 135nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V
Alternative Parts (Cross-Reference): FDMS86263P;
Introduction Date: August 13, 2004
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-CH MOSFET 150V 3A 90mR PowerPAK SO 8-Pin Product overview: SI7439DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7439DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 150V 3A PPAK SO-8
MOSFET -150V Vds 20V Vgs PowerPAK SO-8
MOSFET P-CH 150V 3A PPAK SO-8
P CHANNEL MOSFET, -150V, 3A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 102467-SI7439DP-T1-GE3 | SI7439DP-T1-GE3DKR-ND | 278-SI7439DP-T1-GE3 | SI7439DP-T1-GE3 | SI7439DP-T1-GE3 | SI7439DP-T1-GE3 | 26R1923 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-GE3 | Single FETs, MOSFETs | 150V 3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |