Manufacturer: Vishay
Win Source Part Number: 064567-SI7439DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 135nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 5.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET P-CH 150V 3A PPAK SO-8
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET -150V Vds 20V Vgs PowerPAK SO-8
MOSFET P-CH 150V 3A PPAK SO-8
P CHANNEL MOSFET, -150V, 3A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, P CH, 150V, 3A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
MOSFET P-CH 150V 3A PPAK SO-8
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064567-SI7439DP-T1-E3 | SI7439DP-T1-E3 | SI7439DP-T1-E3DKR-ND | SI7439DP-T1-E3 | 880-SI7439DP-T1-E3 | 57J5732 | 64AH8421 | SI7439DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7439DP-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | MOSFET P-CH 150V 3A PPAK SO-8 | P Channel Mosfet, -150V, 3A, So-8; Channel Type Vishay | Mosfet, P Ch, 150V, 3A, Powerpak; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 150 volts | 150 volts | -150 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3; SO-8 | TO-3 |
