Vishay Precision Group SMD 250V 2.3A MOSFET Transistor SI7434DP-T1-GE3

N-CH MOSFET 250V 2.3A 155mR Surface Mount Product overview: SI7434DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 2.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7434DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay Siliconix
Win Source Part Number: 811128-SI7434DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 1.9W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Current - Continuous Drain (Id) at 25°C: 2.3A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V