Vishay Precision Group Single FETs, MOSFETs SI7434DP-T1-GE3

Description
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Description
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7434DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7434DP-T1-GE3DKR-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7434DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7434DP-T1-GE3TR-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7434DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3CT-ND
Single FETs, MOSFETs SI7434DP-T1-GE3CT-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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FETs - Single - SI7434DP-T1-GE3 - 811128-SI7434DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI7434DP-T1-GE3
811128-SI7434DP-T1-GE3
FETs - Single - SI7434DP-T1-GE3 811128-SI7434DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 811128-SI7434DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 1.9W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Current - Continuous Drain (Id) at 25°C: 2.3A Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 811128-SI7434DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 1.9W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Current - Continuous Drain (Id) at 25°C: 2.3A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

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Singapore
SMD 250V 2.3A MOSFET Transistor
2088-SI7434DP-T1-GE3
SMD 250V 2.3A MOSFET Transistor 2088-SI7434DP-T1-GE3
N-CH MOSFET 250V 2.3A 155mR Surface Mount Product overview: SI7434DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 2.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7434DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 250V 2.3A 155mR Surface Mount Product overview: SI7434DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 2.3A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7434DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7434DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7434DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7434DP-T1-GE3
MOSFET N-CH 250V 2.3A PPAK SO-8

MOSFET N-CH 250V 2.3A PPAK SO-8

Supplier's Site
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay - 26R1922 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay
26R1922
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay 26R1922
N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 250V Vds 20V Vgs PowerPAK SO-8

MOSFET 250V Vds 20V Vgs PowerPAK SO-8

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7434DP-T1-GE3DKR-ND 811128-SI7434DP-T1-GE3 2088-SI7434DP-T1-GE3 SI7434DP-T1-GE3 26R1922 SI7434DP-T1-GE3
Product Name Single FETs, MOSFETs FETs - Single - SI7434DP-T1-GE3 SMD 250V 2.3A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3 TO-3
PD 1900 milliwatts 1900 milliwatts
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