Manufacturer: Vishay Siliconix
Win Source Part Number: 811128-SI7434DP-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 1.9W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Current - Continuous Drain (Id) at 25°C: 2.3A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 250V 2.3A PPAK SO-8
MOSFET 250V Vds 20V Vgs PowerPAK SO-8
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 811128-SI7434DP-T1-GE3 | SI7434DP-T1-GE3TR-ND | 26R1922 | SI7434DP-T1-GE3 | SI7434DP-T1-GE3 |
| Product Name | FETs - Single - SI7434DP-T1-GE3 | Single FETs, MOSFETs | N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
