Vishay Precision Group Single FETs, MOSFETs SI7434DP-T1-GE3

Description
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Description
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7434DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3TR-ND
Single FETs, MOSFETs SI7434DP-T1-GE3TR-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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Single FETs, MOSFETs - SI7434DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7434DP-T1-GE3DKR-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7434DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7434DP-T1-GE3CT-ND
Single FETs, MOSFETs SI7434DP-T1-GE3CT-ND
N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

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FETs - Single - SI7434DP-T1-GE3 - 811128-SI7434DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SI7434DP-T1-GE3
811128-SI7434DP-T1-GE3
FETs - Single - SI7434DP-T1-GE3 811128-SI7434DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 811128-SI7434DP-T1-G E3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250V Supplier Device Package: PowerPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: PowerPAK SO-8 Power Dissipation (Maximum): 1.9W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Current - Continuous Drain (Id) at 25°C: 2.3A Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 811128-SI7434DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 1.9W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 155mOhm at 3.8A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Current - Continuous Drain (Id) at 25°C: 2.3A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7434DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7434DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7434DP-T1-GE3
MOSFET N-CH 250V 2.3A PPAK SO-8

MOSFET N-CH 250V 2.3A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 250V Vds 20V Vgs PowerPAK SO-8

MOSFET 250V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay - 26R1922 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay
26R1922
N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay 26R1922
N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 250V, 3.8A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7434DP-T1-GE3TR-ND 811128-SI7434DP-T1-GE3 SI7434DP-T1-GE3 SI7434DP-T1-GE3 26R1922
Product Name Single FETs, MOSFETs FETs - Single - SI7434DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 250V, 3.8A, Soic; Channel Type Vishay
Polarity N-Channel N-Channel N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3 TO-3
PD 1900 milliwatts
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