P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-CH MOSFET -200V 2.2A 174mR PwrPAK SO-8 Product overview: SI7431DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -200V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7431DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1249458-SI7431DP-T1-
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: P
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 135nC @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 174 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): Si7431DP-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET P-CH 200V 2.2A PPAK SO-8
MOSFET P-CH 200V 2.2A PPAK SO-8
P CH MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET Transistor, P Channel, -2.2 A, -200 V, 145 mohm, -10 V, -4 V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7431DP-T1-GE3DKR-ND | 278-SI7431DP-T1-GE3 | 1249458-SI7431DP-T1-GE3 | SI7431DP-T1-GE3 | SI7431DP-T1-GE3 | 74R0233 | 23T8525 |
| Product Name | Single FETs, MOSFETs | -200V 2.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7431DP-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | P Ch Mosfet, Full Reel; Channel Type Vishay | Mosfet Transistor, P Channel, -2.2 A, -200 V, 145 Mohm, -10 V, -4 V Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | TO-3 | TO-3 | ||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
