Manufacturer: Vishay
Win Source Part Number: 142652-SI7431DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 135nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 174 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): SI7431DP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET P-CH 200V 2.2A PPAK SO-8
MOSFET P-CH 200V 2.2A PPAK SO-8
MOSFET, P-CH, 200V, 2.2A, POWERPAK SO; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
P CHANNEL MOSFET, -200V, 3.8A, POWERPAK-SO, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.9W RoHS Compliant: Yes
MOSFET -200V Vds 20V Vgs PowerPAK SO-8
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 142652-SI7431DP-T1-E3 | SI7431DP-T1-E3DKR-ND | SI7431DP-T1-E3 | SI7431DP-T1-E3 | 60AC3818 | 71T8054 | SI7431DP-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7431DP-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 200V, 2.2A, Powerpak So; Channel Type Vishay | P Channel Mosfet, -200V, 3.8A, Powerpak-So, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
