MOSFET P-CH 30V 6.4A PPAK 1212-8
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 849924-SI7421DN-T1-G
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SI7421
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7421DN-T1-GE3DKR, SI7421DN-T1-GE3CT, SI7421DN-T1-GE3TR, SI7421DN-T1-GE3-ND
MOSFET 30V 9.8A 3.6W 25mohm @ 10V
MOSFET 30V 9.8A 3.6W 25mohm @ 10V
MOSFET P-CH 30V 6.4A PPAK 1212-8
P CHANNEL MOSFET, -30V, 9.8A, POWERPAK; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7421DN-T1-GE3 | SI7421DN-T1-GE3TR-ND | 849924-SI7421DN-T1-GE3 | SI7421DN-T1-GE3 | 880-SI7421DN-T1-GE3 | SI7421DN-T1-GE3 | 26R1921 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7421DN-T1-GE3 | MOSFET | MOSFET 30V 9.8A 3.6W 25mohm @ 10V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 9.8A, Powerpak; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 30 volts | -30 volts | |||||
| IDSS | 6400 milliamps | 9800 milliamps | |||||
| PD | 1500 milliwatts | 1500 milliwatts |
