Vishay Precision Group Single FETs, MOSFETs SI7421DN-T1-E3

Description
MOSFET P-CH 30V 6.4A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET P-CH 30V 6.4A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7421DN-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7421DN-T1-E3
Single FETs, MOSFETs SI7421DN-T1-E3
MOSFET P-CH 30V 6.4A PPAK1212-8

MOSFET P-CH 30V 6.4A PPAK1212-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7421DN-T1-E3 - 028638-SI7421DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7421DN-T1-E3
028638-SI7421DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7421DN-T1-E3 028638-SI7421DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028638-SI7421DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Family Name: Si7421DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 9.8A, 10V Alternative Parts (Cross-Reference): IRF7726TRPBF; Si7421DN-T1-GE3; SI7421DN; STL6P3LLH6; DMP3036SFV-13 ; DMP3035SFG-7; MDV3605URH; Introduction Date: November 20, 2003 ECCN: EAR99 Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028638-SI7421DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si7421DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 9.8A, 10V
Alternative Parts (Cross-Reference): IRF7726TRPBF; Si7421DN-T1-GE3; SI7421DN; STL6P3LLH6; DMP3036SFV-13 ; DMP3035SFG-7; MDV3605URH;
Introduction Date: November 20, 2003
ECCN: EAR99
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7421DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7421DN-T1-E3TR-ND
Single FETs, MOSFETs SI7421DN-T1-E3TR-ND
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7421DN-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7421DN-T1-E3DKR-ND
Single FETs, MOSFETs SI7421DN-T1-E3DKR-ND
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7421DN-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7421DN-T1-E3CT-ND
Single FETs, MOSFETs SI7421DN-T1-E3CT-ND
P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 30V 6.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V 9.8A 3.6W 25mohm @ 10V

MOSFET 30V 9.8A 3.6W 25mohm @ 10V

Buy Now Datasheet
P Channel Mosfet, -30V, 9.8A, Powerpak, Full Reel; Channel Type Vishay - 57J5726 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 9.8A, Powerpak, Full Reel; Channel Type Vishay
57J5726
P Channel Mosfet, -30V, 9.8A, Powerpak, Full Reel; Channel Type Vishay 57J5726
P CHANNEL MOSFET, -30V, 9.8A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 9.8A, POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7421DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7421DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7421DN-T1-E3
MOSFET P-CH 30V 6.4A PPAK1212-8

MOSFET P-CH 30V 6.4A PPAK1212-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7421DN-T1-E3 028638-SI7421DN-T1-E3 SI7421DN-T1-E3TR-ND SI7421DN-T1-E3 57J5726 SI7421DN-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7421DN-T1-E3 Single FETs, MOSFETs MOSFET P Channel Mosfet, -30V, 9.8A, Powerpak, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 6400 milliamps 9800 milliamps
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