Pb- Free P-CHANNEL 60-V (D-S) MOSFET- Le
Pb- Free P-CHANNEL 60-V (D-S) MOSFET- Le
Pb- Free P-CHANNEL 60-V (D-S) MOSFET- Le
P-CH MOSFET -60V 3.6A 65mR SOIC SMT Product overview: SI7415DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 3.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 3.6A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7415DN-T1-GE3
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 102761-SI7415DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si7415DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V
Alternative Parts (Cross-Reference): RJE0615JSP-00#J0; RJE0615JSP-00-J3; FDMC5614P; NVTFS5116PLTAG;
Introduction Date: October 18, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 3.6A PPAK1212-8
MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 60V 3.6A PPAK1212-8
MOSFET, P CHANNEL, 60V, 3.6A, PPAK SO8; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1807759 | 2088-SI7415DN-T1-GE3 | SI7415DN-T1-GE3TR-ND | 102761-SI7415DN-T1-GE3 | SI7415DN-T1-GE3 | SI7415DN-T1-GE3 | SI7415DN-T1-GE3 | 72R4249 |
| Product Name | MOSFETs | -60V 3.6A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, 60V, 3.6A, Ppak So8; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | PowerPAK 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 | TO-3 | ||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
