MOSFET P-CH 60V 3.6A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 028637-SI7415DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V
Alternative Parts (Cross-Reference): NVTFS5116PLWFTAG; DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 60V 3.6A PPAK1212-8
MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
Features:
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7415DN-T1-E3 | 028637-SI7415DN-T1-E3 | SI7415DN-T1-E3TR-ND | SI7415DN-T1-E3 | SI7415DN-T1-E3 | 70026074 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | -60 volts | |||
| IDSS | 3600 milliamps | |||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts |
