Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 SI7415DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028637-SI7415DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V Alternative Parts (Cross-Reference): NVTFS5116PLWFTAG; DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 - 028637-SI7415DN-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI7415DN-T1-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI7415DN-T1-E3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI7415DN-T1-E3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SI7415DN-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W - 70026074 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7415DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Win Source Part Number: 028637-SI7415DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V Alternative Parts (Cross-Reference): NVTFS5116PLWFTAG; DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 - 028637-SI7415DN-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3
028637-SI7415DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 028637-SI7415DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028637-SI7415DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V Alternative Parts (Cross-Reference): NVTFS5116PLWFTAG; DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028637-SI7415DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 5.7A, 10V
Alternative Parts (Cross-Reference): NVTFS5116PLWFTAG; DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7415DN-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7415DN-T1-E3TR-ND
Single FETs, MOSFETs SI7415DN-T1-E3TR-ND
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7415DN-T1-E3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7415DN-T1-E3CT-ND
Single FETs, MOSFETs SI7415DN-T1-E3CT-ND
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7415DN-T1-E3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7415DN-T1-E3DKR-ND
Single FETs, MOSFETs SI7415DN-T1-E3DKR-ND
P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7415DN-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7415DN-T1-E3
Single FETs, MOSFETs SI7415DN-T1-E3
MOSFET P-CH 60V 3.6A PPAK1212-8

MOSFET P-CH 60V 3.6A PPAK1212-8

Supplier's Site Datasheet
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W - 70026074 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W
70026074
MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W 70026074
Features: Halogen-Free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET: 1.8 V Rated Ultra Low On-Resistance for Increased Battery Life New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC Applications: Load/Power Switching in Portable Devices

Features:

  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC
    Applications:
  • Load/Power Switching in Portable Devices
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7415DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7415DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7415DN-T1-E3
MOSFET P-CH 60V 3.6A PPAK1212-8

MOSFET P-CH 60V 3.6A PPAK1212-8

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SI7415DN-T1-E3
MOSFET SI7415DN-T1-E3
MOSFET -60V Vds 20V Vgs PowerPAK 1212-8

MOSFET -60V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028637-SI7415DN-T1-E3 SI7415DN-T1-E3TR-ND SI7415DN-T1-E3 70026074 SI7415DN-T1-E3 SI7415DN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7415DN-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.054Ohm;ID -3.6A;PowerPAK 1212-8;PD 1.5W Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts -60 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 PowerPAK® 1212-8 PowerPAK 1212-8 PowerPAKR 1212-8
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