Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7409ADN-T1-GE3

Description
P-Channel 30V 7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 30V 7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7409ADN-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7409ADN-T1-GE3-ND
Single FETs, MOSFETs SI7409ADN-T1-GE3-ND
P-Channel 30V 7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

P-Channel 30V 7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7409ADN-T1-GE3 - 211669-SI7409ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7409ADN-T1-GE3
211669-SI7409ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7409ADN-T1-GE3 211669-SI7409ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 211669-SI7409ADN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 40nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 19 mOhm @ 11A, 4.5V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 211669-SI7409ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 19 mOhm @ 11A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7409ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7409ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7409ADN-T1-GE3
MOSFET P-CH 30V 7A PPAK 1212-8

MOSFET P-CH 30V 7A PPAK 1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7409ADN-T1-GE3-ND 211669-SI7409ADN-T1-GE3 SI7409ADN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7409ADN-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data