MOSFET P-CH 12V 16A PPAK1212-8 Product overview: SI7405BDN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7405BDN-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028635-SI7405BDN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.6W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 115nC @ 8V
Max Input Capacitance: 3500pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 13 mOhm @ 13.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
P-Channel 12V 16A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 12V 16A PPAK1212-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-SI7405BDN-T1-GE3 | 028635-SI7405BDN-T1-GE3 | SI7405BDN-T1-GE3TR-ND | SI7405BDN-T1-GE3 |
| Product Name | 12V 16A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7405BDN-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3600 milliwatts | 3600 to 33000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 |
