Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7403BDN-T1-GE3

Description
P-Channel 20V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 20V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI7403BDN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7403BDN-T1-GE3TR-ND
Single FETs, MOSFETs SI7403BDN-T1-GE3TR-ND
P-Channel 20V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 20V 8A (Tc) 3.1W (Ta), 9.6W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7403BDN-T1-GE3 - 1096161-SI7403BDN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7403BDN-T1-GE3
1096161-SI7403BDN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7403BDN-T1-GE3 1096161-SI7403BDN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096161-SI7403BDN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 15nC @ 8V Max Input Capacitance: 430pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 74 mOhm @ 5.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1096161-SI7403BDN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15nC @ 8V
Max Input Capacitance: 430pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 74 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7403BDN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7403BDN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7403BDN-T1-GE3
MOSFET P-CH 20V 8A PPAK1212-8

MOSFET P-CH 20V 8A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7403BDN-T1-GE3TR-ND 1096161-SI7403BDN-T1-GE3 SI7403BDN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7403BDN-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 430 pF @ 10 V
V(BR)DSS 20 volts
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