Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7402DN-T1-E3 SI7402DN-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096159-SI7402DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 55nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 1096159-SI7402DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 55nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7402DN-T1-E3 - 1096159-SI7402DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7402DN-T1-E3
1096159-SI7402DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7402DN-T1-E3 1096159-SI7402DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096159-SI7402DN-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 850mV @ 250μA Max Gate Charge: 55nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1096159-SI7402DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 850mV @ 250μA
Max Gate Charge: 55nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI7402DN-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7402DN-T1-E3-ND
Single FETs, MOSFETs SI7402DN-T1-E3-ND
N-Channel 12V 13A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 12V 13A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7402DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7402DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7402DN-T1-E3
MOSFET N-CH 12V 13A PPAK 1212-8

MOSFET N-CH 12V 13A PPAK 1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1096159-SI7402DN-T1-E3 SI7402DN-T1-E3-ND SI7402DN-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7402DN-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 12 volts
PD 1500 milliwatts
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