N-Channel 30V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 211667-SI7390DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 9A PPAK SO-8 Product overview: SI7390DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7390DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 9A PPAK SO-8
MOSFET N-CH 30V 9A PPAK SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7390DP-T1-GE3-ND | 211667-SI7390DP-T1-GE3 | 278-SI7390DP-T1-GE3 | SI7390DP-T1-GE3 | SI7390DP-T1-GE3 | SI7390DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7390DP-T1-GE3 | 30V 9A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | Tape & Reel (TR) | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | |
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 1800 milliwatts | 1.8 milliwatts | 1800 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
