N-CH MOSFET 30V 9A 9.5mR 1.8W Surface Mount Product overview: SI7390DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 9A, 1.8W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 9A, 1.8W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7390DP-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028631-SI7390DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
N-Channel 30V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 30V 9A PPAK SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 30V 9A PPAK SO-8
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 30V, 0.0095OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, POWERPAK SOP-8. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-SI7390DP-T1-E3 | 028631-SI7390DP-T1-E3 | 742-SI7390DP-T1-E3TR-ND | SI7390DP-T1-E3 | SI7390DP-T1-E3 | SI7390DP-T1-E3 | 220658462 |
| Product Name | SMD 30V 9A 1.8W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7390DP-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 1800 milliwatts | 1800 milliwatts | 1800 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 30 volts | 30 volts |
