Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7384DP-T1-GE3

Description
N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7384DP-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7384DP-T1-GE3-ND
Single FETs, MOSFETs SI7384DP-T1-GE3-ND
N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7384DP-T1-GE3 - 028628-SI7384DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7384DP-T1-GE3
028628-SI7384DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7384DP-T1-GE3 028628-SI7384DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028628-SI7384DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028628-SI7384DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7384DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7384DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7384DP-T1-GE3
MOSFET N-CH 30V 11A PPAK SO-8

MOSFET N-CH 30V 11A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI7384DP-T1-GE3-ND 028628-SI7384DP-T1-GE3 SI7384DP-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7384DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

 - AUIRFR4620 - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type DPAK
Packing Method Tube; Tube
View Details
6 suppliers
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-20 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
2 suppliers