Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7382DP-T1-E3 SI7382DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 097433-SI7382DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 097433-SI7382DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7382DP-T1-E3 - 097433-SI7382DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7382DP-T1-E3
097433-SI7382DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7382DP-T1-E3 097433-SI7382DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 097433-SI7382DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 097433-SI7382DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 24A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI7382DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7382DP-T1-E3TR-ND
Single FETs, MOSFETs SI7382DP-T1-E3TR-ND
N-Channel 30V 14A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 30V 14A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7382DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7382DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7382DP-T1-E3
MOSFET N-CH 30V 14A PPAK SO-8

MOSFET N-CH 30V 14A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 097433-SI7382DP-T1-E3 SI7382DP-T1-E3TR-ND SI7382DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7382DP-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1800 milliwatts
Unlock Full Specs
to access all available technical data