Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7374DP-T1-E3 SI7374DP-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 132374-SI7374DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 5500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23.8A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 132374-SI7374DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 5500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23.8A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7374DP-T1-E3 - 132374-SI7374DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7374DP-T1-E3
132374-SI7374DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7374DP-T1-E3 132374-SI7374DP-T1-E3
Manufacturer: Vishay Win Source Part Number: 132374-SI7374DP-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 56W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 5500pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23.8A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 132374-SI7374DP-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 5500pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI7374DP-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7374DP-T1-E3TR-ND
Single FETs, MOSFETs SI7374DP-T1-E3TR-ND
N-Channel 30V 24A (Tc) 5W (Ta), 56W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 24A (Tc) 5W (Ta), 56W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7374DP-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7374DP-T1-E3
Single FETs, MOSFETs SI7374DP-T1-E3
MOSFET N-CH 30V 24A PPAK SO-8

MOSFET N-CH 30V 24A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7374DP-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7374DP-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7374DP-T1-E3
MOSFET N-CH 30V 24A PPAK SO-8

MOSFET N-CH 30V 24A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 24A 56W 5.5mohm @ 10V

MOSFET 30V 24A 56W 5.5mohm @ 10V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 132374-SI7374DP-T1-E3 SI7374DP-T1-E3TR-ND SI7374DP-T1-E3 SI7374DP-T1-E3 SI7374DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7374DP-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 5000 to 56000 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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