Manufacturer: Vishay
Win Source Part Number: 1096156-SI7370DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
MOSFET N-CH 60V 9.6A PPAK SO-8
Trans MOSFET N-CH 60V 9.6A 8-Pin PowerPAK SO T/R Product overview: SI7370DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI7370DP-T1-GE3
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 60V 9.6A PPAK SO-8
MOSFET, N-CH, 60V, 9.6A, 150DEG C, 1.9W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096156-SI7370DP-T1-GE3 | SI7370DP-T1-GE3TR-ND | SI7370DP-T1-GE3 | 2088-SI7370DP-T1-GE3 | SI7370DP-T1-GE3 | SI7370DP-T1-GE3 | 40X8703 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7370DP-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 9.6A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 9.6A, 150Deg C, 1.9W; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
