MOSFET N-CH 60V 9.6A PPAK SO-8
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028627-SI7370DP-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.9W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 60V 9.6A 11mR SOIC 8-Pin Product overview: SI7370DP-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7370DP-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 9.6A;PowerPAK SO-8;PD 1.9W;-55de
MOSFET N-CH 60V 9.6A PPAK SO-8
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
N CHANNEL MOSFET, 60V, 15.8A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.6A; On Resistance Rds(on):0.009ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 9.6A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.9W RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7370DP-T1-E3 | SI7370DP-T1-E3CT-ND | 028627-SI7370DP-T1-E3 | 278-SI7370DP-T1-E3 | 70026072 | SI7370DP-T1-E3 | SI7370DP-T1-E3 | 06J8137 | 29X0545 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7370DP-T1-E3 | 60V 9.6A SOIC MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.009Ohm;ID 9.6A;PowerPAK SO-8;PD 1.9W;-55de | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 15.8A, Soic; Transistor Polarity Vishay | Mosfet, N Channel, 60V, 9.6A, Powerpak So-8, Full Reel; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 9600 milliamps | 9600 milliamps | 9600 milliamps | ||||||
| PD | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts | 1900 milliwatts |
