Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7366DP-T1-GE3 SI7366DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096155-SI7366DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096155-SI7366DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7366DP-T1-GE3 - 1096155-SI7366DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7366DP-T1-GE3
1096155-SI7366DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7366DP-T1-GE3 1096155-SI7366DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096155-SI7366DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1096155-SI7366DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7366DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7366DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7366DP-T1-GE3
MOSFET N-CH 20V 13A PPAK SO-8

MOSFET N-CH 20V 13A PPAK SO-8

Supplier's Site
MOSFET N-CH 20V 13A PPAK SO-8 - 880-SI7366DP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 13A PPAK SO-8
880-SI7366DP-T1-GE3
MOSFET N-CH 20V 13A PPAK SO-8 880-SI7366DP-T1-GE3
MOSFET N-CH 20V 13A PPAK SO-8

MOSFET N-CH 20V 13A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096155-SI7366DP-T1-GE3 SI7366DP-T1-GE3 880-SI7366DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7366DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 20V 13A PPAK SO-8
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts
PD 1700 milliwatts 1700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAKR SO-8
Unlock Full Specs
to access all available technical data