Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3 SI7336ADP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028625-SI7336ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta) Family Name: Si7336ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 4.5V Max Input Capacitance: 5600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SIR818DP-T1-GE3; SiR164DP-T1-GE3; TPC8027(T2LSAN2,AQ; TPC8027(TE12L,Q,M); Introduction Date: October 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
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Description
Manufacturer: Vishay Win Source Part Number: 028625-SI7336ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta) Family Name: Si7336ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 4.5V Max Input Capacitance: 5600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SIR818DP-T1-GE3; SiR164DP-T1-GE3; TPC8027(T2LSAN2,AQ; TPC8027(TE12L,Q,M); Introduction Date: October 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3 - 028625-SI7336ADP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3
028625-SI7336ADP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3 028625-SI7336ADP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028625-SI7336ADP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.4W (Ta) Family Name: Si7336ADP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 50nC @ 4.5V Max Input Capacitance: 5600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SIR818DP-T1-GE3; SiR164DP-T1-GE3; TPC8027(T2LSAN2,AQ; TPC8027(TE12L,Q,M); Introduction Date: October 21, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 028625-SI7336ADP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta)
Family Name: Si7336ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Max Input Capacitance: 5600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SIR818DP-T1-GE3; SiR164DP-T1-GE3; TPC8027(T2LSAN2,AQ; TPC8027(TE12L,Q,M);
Introduction Date: October 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI7336ADP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7336ADP-T1-GE3CT-ND
Single FETs, MOSFETs SI7336ADP-T1-GE3CT-ND
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7336ADP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7336ADP-T1-GE3TR-ND
Single FETs, MOSFETs SI7336ADP-T1-GE3TR-ND
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI7336ADP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7336ADP-T1-GE3DKR-ND
Single FETs, MOSFETs SI7336ADP-T1-GE3DKR-ND
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore, Singapore
30V 30A 5.4W MOSFET Transistor
278-SI7336ADP-T1-GE3
30V 30A 5.4W MOSFET Transistor 278-SI7336ADP-T1-GE3
30V 30A N-CH MOSFET 3mR RdsOn 5.4W Product overview: SI7336ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 5.4W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 5.4W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7336ADP-T1-GE3 can be used for catalog matching and distributor lookup.

30V 30A N-CH MOSFET 3mR RdsOn 5.4W Product overview: SI7336ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 5.4W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 5.4W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7336ADP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7336ADP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7336ADP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7336ADP-T1-GE3
MOSFET N-CH 30V 30A PPAK SO-8

MOSFET N-CH 30V 30A PPAK SO-8

Supplier's Site
30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS - 17930-SI7336ADP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS
17930-SI7336ADP-T1-GE3
30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS 17930-SI7336ADP-T1-GE3
30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS

30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS

Supplier's Site
MOSFET 30V 30A 5.4W 3.0mohm @ 10V

MOSFET 30V 30A 5.4W 3.0mohm @ 10V

Buy Now Datasheet
N Channel Mosfet; Channel Type Vishay - 12R3257 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet; Channel Type Vishay
12R3257
N Channel Mosfet; Channel Type Vishay 12R3257
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.4W RoHS Compliant: Yes

N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.4W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028625-SI7336ADP-T1-GE3 SI7336ADP-T1-GE3CT-ND 278-SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 17930-SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 12R3257
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3 Single FETs, MOSFETs 30V 30A 5.4W MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs 30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS MOSFET N Channel Mosfet; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 5400 milliwatts 5400 milliwatts 5400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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