30V 30A N-CH MOSFET 3mR RdsOn 5.4W Product overview: SI7336ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 5.4W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 5.4W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7336ADP-T1-GE3
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8
N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028625-SI7336ADP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta)
Family Name: Si7336ADP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Max Input Capacitance: 5600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SIR818DP-T1-GE3; SiR164DP-T1-GE3; TPC8027(T2LSAN2,AQ; TPC8027(TE12L,Q,M);
Introduction Date: October 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET 30V 30A 5.4W 3.0mohm @ 10V
30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.4W RoHS Compliant: Yes
MOSFET N-CH 30V 30A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7336ADP-T1-GE3 | SI7336ADP-T1-GE3CT-ND | 028625-SI7336ADP-T1-GE3 | SI7336ADP-T1-GE3 | 17930-SI7336ADP-T1-GE3 | 12R3257 | SI7336ADP-T1-GE3 |
| Product Name | 30V 30A 5.4W MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7336ADP-T1-GE3 | MOSFET | 30V 30A 3mΩ@10V,25A 5.4W 3V@250uA N Channel PowerPAK SO-8 MOSFETs ROHS | N Channel Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 5400 milliwatts | 5400 milliwatts | 5400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | SO-8; PowerPAKR SO-8 |