MOSFET N-CH 30V 6.5A PPAK 1212-8 Product overview: SI7326DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7326DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064555-SI7326DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 6.5A PPAK 1212-8
PowerPAK-1212-8 MOSFETs ROHS
N CHANNEL MOSFET, 30V, 10A POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Power Dissipation:1.5W RoHS Compliant: Yes
MOSFET 30V 10A 3.5W 19.5mohm @ 10V
MOSFET N-CH 30V 6.5A PPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7326DN-T1-GE3 | 064555-SI7326DN-T1-GE3 | SI7326DN-T1-GE3CT-ND | SI7326DN-T1-GE3 | 17930-SI7326DN-T1-GE3 | 16P3839 | SI7326DN-T1-GE3 | SI7326DN-T1-GE3 |
| Product Name | 30V 6.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7326DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | PowerPAK-1212-8 MOSFETs ROHS | N Channel Mosfet, 30V, 10A Powerpak, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0160 kS | |||||||
| PD | 3.5 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
