Vishay Intertechnology, Inc. Single FETs, MOSFETs SI7326DN-T1-E3

Description
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7326DN-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7326DN-T1-E3TR-ND
Single FETs, MOSFETs SI7326DN-T1-E3TR-ND
N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7326DN-T1-E3 - 028624-SI7326DN-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7326DN-T1-E3
028624-SI7326DN-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7326DN-T1-E3 028624-SI7326DN-T1-E3
Manufacturer: Vishay Win Source Part Number: 028624-SI7326DN-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 13nC @ 5V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 19.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028624-SI7326DN-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 6.5A MOSFET Transistor
278-SI7326DN-T1-E3
30V 6.5A MOSFET Transistor 278-SI7326DN-T1-E3
MOSFET N-CH 30V 6.5A PPAK 1212-8 Product overview: SI7326DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7326DN-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 6.5A PPAK 1212-8 Product overview: SI7326DN-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7326DN-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7326DN-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7326DN-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7326DN-T1-E3
MOSFET N-CH 30V 6.5A PPAK 1212-8

MOSFET N-CH 30V 6.5A PPAK 1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 10A 1.5W

MOSFET 30V 10A 1.5W

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7326DN-T1-E3TR-ND 028624-SI7326DN-T1-E3 278-SI7326DN-T1-E3 SI7326DN-T1-E3 SI7326DN-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7326DN-T1-E3 30V 6.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 Tape & Reel (TR) PowerPAKR 1212-8
V(BR)DSS 30 volts
PD 1500 milliwatts 3.5 milliwatts
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4 suppliers