N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
100V 18A N-CH MOSFET, 58mR Rds(on), PowerPAK 1212 Product overview: SI7322DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7322DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 794312-SI7322DN-T1-G
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK 1212-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Family Name: Si7322DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PowerPAK 1212-8
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 750pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.8W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs: 58 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STL7N10F7; IRFHM3911TRPBF; STL4N10F7; DMN10H120SFG-13;
Introduction Date: December 11, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 18A PPAK1212-8
N CHANNEL MOSFET, 100V, 18A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4.4V RoHS Compliant: Yes
MOSFET N-CH 100V 18A PPAK1212-8
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7322DN-T1-GE3CT-ND | 278-SI7322DN-T1-GE3 | 794312-SI7322DN-T1-GE3 | SI7322DN-T1-GE3 | 16P3838 | SI7322DN-T1-GE3 | SI7322DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 100V 18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7322DN-T1-GE3 | Single FETs, MOSFETs | N Channel Mosfet, 100V, 18A, Powerpak; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | PowerPAK® 1212-8 | SOT3 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 | ||
| PD | 52000 milliwatts | 3800 to 52000 milliwatts | 3800 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
