MOSFET N-CH 100V 18A PPAK 1212-8
Manufacturer: Vishay
Win Source Part Number: 1096153-SI7322DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 58 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 100V 18A PPAK 1212-8
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7322DN-T1-E3 | 1096153-SI7322DN-T1-E3 | SI7322DN-T1-E3CT-ND | SI7322DN-T1-E3 | SI7322DN-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7322DN-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 3800 milliwatts | 3800 to 52000 milliwatts |
