N-CH MOSFET 100V 5.5A 58mR 52W Surface Mount Product overview: SI7322DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 100V, 5.5A, 52W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 5.5A, 52W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7322DN-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 1096153-SI7322DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.4V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 58 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 18A PPAK 1212-8
MOSFET N-CH 100V 18A PPAK 1212-8
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI7322DN-T1-E3 | SI7322DN-T1-E3CT-ND | 1096153-SI7322DN-T1-E3 | SI7322DN-T1-E3 | SI7322DN-T1-E3 | SI7322DN-T1-E3 |
| Product Name | SMD 100V 5.5A 52W MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7322DN-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| PD | 52000 milliwatts | 3800 to 52000 milliwatts | 3800 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAKR 1212-8 | PowerPAK® 1212-8 |
