Vishay Precision Group Single FETs, MOSFETs SI7315DN-T1-GE3

Description
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI7315DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7315DN-T1-GE3DKR-ND
Single FETs, MOSFETs SI7315DN-T1-GE3DKR-ND
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - SI7315DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7315DN-T1-GE3CT-ND
Single FETs, MOSFETs SI7315DN-T1-GE3CT-ND
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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Single FETs, MOSFETs - SI7315DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI7315DN-T1-GE3TR-ND
Single FETs, MOSFETs SI7315DN-T1-GE3TR-ND
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7315DN-T1-GE3 - 894759-SI7315DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7315DN-T1-GE3
894759-SI7315DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7315DN-T1-GE3 894759-SI7315DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 894759-SI7315DN-T1-G E3 Series: TrenchFET® Operating Temperature Range: -50°C ~ 150°C (TJ) Features: P-Channel 150 V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 Package: PowerPAK® 1212-8 Package: Reel - TR Mounting: Surface Mount Family Name: SI7315 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® 1212-8 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SI7315DN-T1-GE3CT, SI7315DN-T1-GE3TR, SI7315DN-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 894759-SI7315DN-T1-GE3
Series: TrenchFET®
Operating Temperature Range: -50°C ~ 150°C (TJ)
Features: P-Channel 150 V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7315
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7315DN-T1-GE3CT, SI7315DN-T1-GE3TR, SI7315DN-T1-GE3DKR

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Single FETs, MOSFETs - SI7315DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI7315DN-T1-GE3
Single FETs, MOSFETs SI7315DN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8

MOSFET P-CH 150V 8.9A PPAK1212-8

Supplier's Site Datasheet
Singapore
P-Channel 8.9A 150V 0.315ohm MOSFET Transistor
278-SI7315DN-T1-GE3
P-Channel 8.9A 150V 0.315ohm MOSFET Transistor 278-SI7315DN-T1-GE3
Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SI7315DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8.9A, 150V, 0.315ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8.9A, 150V, 0.315ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7315DN-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SI7315DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8.9A, 150V, 0.315ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8.9A, 150V, 0.315ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7315DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.262 Ohm, -10 V Rohs Compliant Vishay - 40X8702 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.262 Ohm, -10 V Rohs Compliant Vishay
40X8702
Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.262 Ohm, -10 V Rohs Compliant Vishay 40X8702
MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.262 ohm, -10 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.262 ohm, -10 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI7315DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI7315DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI7315DN-T1-GE3
MOSFET P-CH 150V 8.9A PPAK1212-8

MOSFET P-CH 150V 8.9A PPAK1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8

MOSFET -150V Vds 30V Vgs PowerPAK 1212-8

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI7315DN-T1-GE3DKR-ND 894759-SI7315DN-T1-GE3 SI7315DN-T1-GE3 278-SI7315DN-T1-GE3 40X8702 SI7315DN-T1-GE3 SI7315DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7315DN-T1-GE3 Single FETs, MOSFETs P-Channel 8.9A 150V 0.315ohm MOSFET Transistor Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.262 Ohm, -10 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK® 1212-8 PowerPAK® 1212-8 TO-3 PowerPAKR 1212-8
TJ -50 to 150 C (-58 to 302 F) -50 to 150 C (-58 to 302 F) -55 C (-67 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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