Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SI7315DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 8.9A, 150V, 0.315ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8.9A, 150V, 0.315ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7315DN-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 150V 8.9A PPAK1212-8
Manufacturer: Vishay
Win Source Part Number: 894759-SI7315DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -50°C ~ 150°C (TJ)
Features: P-Channel 150 V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI7315
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI7315DN-T1-GE3CT, SI7315DN-T1-GE3TR, SI7315DN-T1-GE3DKR
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8
MOSFET Transistor, P Channel, -8.9 A, -150 V, 0.262 ohm, -10 V RoHS Compliant: Yes
MOSFET P-CH 150V 8.9A PPAK1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI7315DN-T1-GE3 | SI7315DN-T1-GE3DKR-ND | SI7315DN-T1-GE3 | 894759-SI7315DN-T1-GE3 | SI7315DN-T1-GE3 | 40X8702 | SI7315DN-T1-GE3 |
| Product Name | P-Channel 8.9A 150V 0.315ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7315DN-T1-GE3 | MOSFET | Mosfet Transistor, P Channel, -8.9 A, -150 V, 0.262 Ohm, -10 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| PD | 52000 milliwatts | 3800 milliwatts | |||||
| TJ | -55 C (-67 F) | -50 to 150 C (-58 to 302 F) | -50 to 150 C (-58 to 302 F) | ||||
| Package Type | PowerPAK® 1212-8 | PowerPAK® 1212-8 | SOT3; PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 |
