MOSFET P-CH 60V 8A PPAK1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 1096151-SI7309DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 600pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 115 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET 60V 8.0A 19.8W 115mohm @ 10V
MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 60V 8A PPAK1212-8
P CHANNEL MOSFET, -60V, 8A POWERPAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.146ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 8A POWERPAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P-CH, -60V, -8A, POWERPAK 1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI7309DN-T1-GE3 | SI7309DN-T1-GE3DKR-ND | 1096151-SI7309DN-T1-GE3 | 880-SI7309DN-T1-GE3 | SI7309DN-T1-GE3 | SI7309DN-T1-GE3 | 26R1917 | 33P5391 | 61AC1939 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7309DN-T1-GE3 | MOSFET 60V 8.0A 19.8W 115mohm @ 10V | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -60V, 8A Powerpak; Transistor Polarity Vishay | P Channel Mosfet, -60V, 8A Powerpak, Full Reel; Channel Type Vishay | Mosfet, P-Ch, -60V, -8A, Powerpak 1212-8; Transistor Polarity Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 60 volts | 60 volts | -60 volts | ||||||
| IDSS | 8000 milliamps | 8000 milliamps | 8000 milliamps | -8000 milliamps | |||||
| PD | 3200 milliwatts | 3200 to 19800 milliwatts | 3200 milliwatts |
