Manufacturer: Vishay
Win Source Part Number: 028622-SI7308DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Family Name: SI7308DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 58 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): RQ3L050GNTB; DMN6069SFGQ-7; TPCA8089(TE12L,Q); TPCA8089;
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 60V 6A PPAK1212-8
N CHANNEL MOSFET, 60V, 6A, POWERPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N-CH, 60V, 6A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
MOSFET 60V 6.0A 19.8W 58mohm @ 10V
MOSFET N-CH 60V 6A PPAK1212-8
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028622-SI7308DN-T1-GE3 | SI7308DN-T1-GE3TR-ND | SI7308DN-T1-GE3 | 26R1916 | 57AJ0464 | SI7308DN-T1-GE3 | 880-SI7308DN-T1-GE3 | SI7308DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7308DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 60V, 6A, Powerpak; Channel Type Vishay | Mosfet, N-Ch, 60V, 6A, Powerpak 1212 Rohs Compliant Vishay | MOSFET | MOSFET 60V 6.0A 19.8W 58mohm @ 10V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 3200 to 19800 milliwatts | 3200 milliwatts | 3200 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 |
