Manufacturer: Vishay
Win Source Part Number: 064554-SI7308DN-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Family Name: SI7308DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 665pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 58 mOhm @ 5.4A, 10V
Alternative Parts (Cross-Reference): RQ3L050GNTB; DMN6069SFGQ-7; TPCA8089(TE12L,Q); TPCA8089;
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 6A PPAK1212-8
N-CH MOSFET 60V 6A 58mR TrenchFET Surface Mount Product overview: SI7308DN-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI7308DN-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 60V, 6A, POWERPAK 1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 6A PPAK1212-8
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 064554-SI7308DN-T1-E3 | SI7308DN-T1-E3 | 278-SI7308DN-T1-E3 | SI7308DN-T1-E3CT-ND | SI7308DN-T1-E3 | 61AC1938 | SI7308DN-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI7308DN-T1-E3 | Single FETs, MOSFETs | SMD 60V 6A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 6A, Powerpak 1212-8; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 3200 to 19800 milliwatts | 3200 milliwatts | 19800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 |
